FQB22P10TM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQB22P10TM
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT P-Channel number of channels:1 3.75 W -100 V Continuous Drain Current (ID):22 A 50 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 125 mΩ |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -22 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 3.75 W |
| Power Dissipation | 3.75 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 1.5 nF |
| Continuous Drain Current (ID) | 22 A |
| Rds On Max | 125 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 60 ns |
| Element Configuration | Single |
| Fall Time | 110 ns |
| Rise Time | 170 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 50 nC |
| Drain to Source Resistance | 125 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
Stock: 487
Distributors
pcbx
pcbxUnit Price$1.59235
Ext.Price$1.59235
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.59235 | $1.59235 |
| 10 | $1.35293 | $13.52930 |
| 25 | $1.25609 | $31.40225 |
| 50 | $1.16618 | $58.30900 |
| 100 | $1.08271 | $108.27100 |
| 300 | $1.04891 | $314.67300 |
| 500 | $1.01617 | $508.08500 |